? 2017 ixys corporation, all rights reserved symbol test conditions maximum ratings v dss t j = 25 ? c to 175 ? c 120 v v dgr t j = 25 ? c to 175 ? c, r gs = 1m ? 120 v v gss continuous ? 20 v v gsm transient ? 30 v i d25 t c = 25 ? c 110 a i dm t c = 25 ? c, pulse width limited by t jm 200 a i a t c = 25 ? c55 a e as t c = 25 ? c 800 mj p d t c = 25 ? c 517 w t j -55 ... +175 ?? c t jm 175 ?? c t stg -55 ... +175 ?? c t l maximum lead temperature for soldering 300 c t sold plastic body for 10s 260 c m d mounting torque (to-220) 1.13 / 10 nm/lb.in. weight to-263 2.5 g to-220 3.0 g symbol test conditions characteristic values (t j = 25 ? c unless otherwise specified) min. typ. max. bv dss v gs = 0v, i d = 250 ? a 120 v v gs(th) v ds = v gs , i d = 250 ? a 2.5 4.5 v i gss v gs = ? 20v, v ds = 0v ????????????? 200 na i dss v ds = v dss , v gs = 0v 5 ??? a t j = 150 ? c 350 ??? a r ds(on) v gs = 10v, i d = 0.5 ? i d25 , notes 1, 2 11.4 14.0 m ? trencht2 tm power mosfet n-channel enhancement mode avalanche rated fast intrinsic rectifier ixta110 n12t2 ixtp110 n12t2 v dss = 120v i d25 = 110a r ds(on) ? ? ? ? ? 14m ? ? ? ? ? ds100830a(5/17) features ? international standard packages ? 175c operating temperature ? avalanche rated ? low r ds(on) ? fast intrinsic rectifier ? high current handling capability advantages ? easy to mount ? space savings ? high power density applications ? synchronous rectification ? dc/dc converters and off-line ups ? primary- side switch ? high current switching applications g = gate d = drain s = source tab = drain to-263aa (ixta) g d s to-220ab (ixtp) d (tab) g s d (tab) advance technical information
ixys reserves the right to change limits, test conditions, and dimensions. IXTA110N12T2 ixtp110n12t2 symbol test conditions characteristic values (t j = 25 ? c, unless otherwise specified) min. typ. max. g fs v ds = 10v, i d = 0.5 ? i d25 , note 1 46 78 s c iss 6570 pf c oss v gs = 0v, v ds = 25v, f = 1mhz 586 pf c rss 43 pf t d(on) 21 ns t r 30 ns t d(off) 29 ns t f 15 ns q g(on) 120 nc q gs v gs = 10v, v ds = 0.5 ? v dss , i d = 0.5 ? i d25 36 nc q gd 30 nc r thjc 0.29 ?? c/w r thch to-220 0.50 ?? c/w source-drain diode symbol test conditions characteristic values (t j = 25 ? c, unless otherwise specified) min. typ. max. i s v gs = 0v 110 a i sm repetitive, pulse width limited by t jm 440 a v sd i f = i s , v gs = 0v, note 1 1.4 v t rr 64 ns i rm 14.4 a q rm 460 nc notes: 1. pulse test, t ? 300 ? s, duty cycle, d ?? 2%. 2. on through-hole packages, r ds(on) kelvin test contact location must be 5mm or less from the package body. resistive switching times v gs = 10v, v ds = 0.5 ? v dss , i d = 0.5 ? i d25 r g = 2 ? (external) i f = 0.5 ? i d25 , v gs = 0v -di/dt = 100a/ ? s v r = 60v ixys mosfets and igbts are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 b1 6,683,344 6,727,585 7,005,734 b2 7,157,338b2 by one or more of the following u.s. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 b1 6,534,343 6,710,405 b2 6,759,692 7,063,975 b2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 b1 6,583,505 6,710,463 6,771,478 b2 7,071,537 pins: 1 - gate 2 - drain 3 - source to-220 outline to-263 outline pins: 1 - gate 2,4 - drain 3 - source advance technical information the product presented herein is under development. the technical specifications offered are derived from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a "considered reflection" of the anticipated result. ixys reserves the right to change limits, test conditions, and dimensions without notice.
? 2017 ixys corporation, all rights reserved IXTA110N12T2 ixtp110n12t2 fig. 3. output characteristics @ t j = 150 o c 0 10 20 30 40 50 60 70 80 90 100 110 00.511.522.533.5 v ds - volts i d - amperes v gs = 15v 10v 8v 6v 5v 4v 7v fig. 4. normalized r ds(on) to i d = 55a value vs. junction temperature 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 -50 -25 0 25 50 75 100 125 150 175 t j - degrees centigrade r ds(on) - normalized v gs = 10v i d = 55a i d = 110a fig. 5. normalized r ds(on) to i d = 55a vs. drain current 0 1 2 3 4 5 6 0 50 100 150 200 250 300 350 400 i d - amperes r ds(on) - normalized v gs = 10v t j = 175 o c t j = 25 o c fig. 6. drain current vs. case temperature 0 20 40 60 80 100 120 -50 -25 0 25 50 75 100 125 150 175 t c - degrees centigrade i d - amperes fig. 2. extended output characteristics @ t j = 25 o c 0 50 100 150 200 250 300 350 400 450 0 5 10 15 20 25 30 v ds - volts i d - amperes v gs = 15v 10v 6v 7v 8v 9v 5v fig. 1. output characteristics @ t j = 25 o c 0 10 20 30 40 50 60 70 80 90 100 110 00.5 11.5 v ds - volts i d - amperes v gs = 15v 10v 9v 8v 6v 7v 5v
ixys reserves the right to change limits, test conditions, and dimensions. IXTA110N12T2 ixtp110n12t2 fig. 7. input admittance 0 40 80 120 160 200 3.03.54.04.55.05.56.06.57.07.5 v gs - volts i d - amperes v ds = 10v t j = 150 o c 25 o c - 40 o c fig. 8. transconductance 0 20 40 60 80 100 120 140 160 0 40 80 120 160 200 240 i d - amperes g f s - siemens v ds = 10v t j = - 40 o c 25 o c 150 o c fig. 9. forward voltage drop of intrinsic diode 0 100 200 300 400 500 600 700 800 0.0 0.4 0.8 1.2 1.6 2.0 2.4 2.8 v sd - volts i s - amperes t j = 150 o c t j = 25 o c fig. 10. gate charge 0 2 4 6 8 10 0 20 40 60 80 100 120 q g - nanocoulombs v gs - volts v ds = 60v i d = 55a i g = 10ma fig. 11. capacitance 10 100 1,000 10,000 0 5 10 15 20 25 30 35 40 v ds - volts capacitance - picofarad s f = 1 mhz c iss c rss c oss fig. 12. forward-bias safe operating area 0.1 1 10 100 1000 1 10 100 1,000 v ds - volts i d - amperes 100 s 1ms 10ms r ds(on) limit t j = 175 o c t c = 25 o c single pulse dc
? 2017 ixys corporation, all rights reserved IXTA110N12T2 ixtp110n12t2 fig. 14. resistive turn-on rise time vs. drain current 16 20 24 28 32 36 40 40 60 80 100 120 140 160 180 200 220 i d - amperes t r - nanoseconds r g = 2 ? , v gs = 10v v ds = 60v t j = 150 o c t j = 25 o c fig. 15. resistive turn-on switching times vs. gate resistance 0 20 40 60 80 100 120 140 160 2345678910 r g - ohms t r - nanoseconds 15 20 25 30 35 40 45 50 55 t d(on) - nanoseconds i d = 110a t f t d(off) t j = 150 o c, v gs = 10v v ds = 60v i d = 220a fig. 16. resistive turn-off switching times vs. junction temperature 0 5 10 15 20 25 30 35 40 25 50 75 100 125 150 t j - degrees centigrade t f - nanoseconds 10 20 30 40 50 60 70 80 90 t d(off) - nanoseconds t f t d(off) r g = 2 ? , v gs = 10v v ds = 60v i d = 220a i d = 110a fig. 17. resistive turn-off switching times vs. drain current 12 13 14 15 16 17 18 19 40 60 80 100 120 140 160 180 200 220 i d - amperes t f - nanoseconds 10 20 30 40 50 60 70 80 t d(off) - nanoseconds t f t d(off) r g = 2 ? , v gs = 10v v ds = 60v t j = 25 o c t j = 150 o c fig. 13. resistive turn-on rise time vs. junction temperature 16 20 24 28 32 36 40 25 50 75 100 125 150 t j - degrees centigrade t r - nanoseconds r g = 2 ? , v gs = 10v v ds = 60v i d = 220a i d = 110a fig. 18. resistive turn-off switching times vs. gate resistance 0 10 20 30 40 50 60 70 80 90 2345678910 r g - ohms t f - nanoseconds 10 20 30 40 50 60 70 80 90 100 t d(off) - nanoseconds t f t d(off) t j = 150 o c, v gs = 10v v ds = 60v i d = 220a i d = 110a
ixys reserves the right to change limits, test conditions, and dimensions. IXTA110N12T2 ixtp110n12t2 ixys ref: ixt_110n12t2 (g5-n12)5-03-17 fig. 19. maximum transient thermal impedance 0.001 0.01 0.1 1 0.00001 0.0001 0.001 0.01 0.1 1 pulse width - second z (th)jc - k / w
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